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Enhancement of optical and electrical properties of zno thin films using indium doping
Subject Area:
Physical Sciences and Engineering
Abstract:
Pristine and indium doped ZnO thin films were prepared on fused silica substrate using chemical spray pyrolysis technique. All films were vacuum annealed at 4000C for three hours at a vacuum of 10-5mbar. The XRD analysis revealed a shift of preferred orientation from (002) to (101) direction at higher indium doping concentration. A minimum sheet resistance of 1.986 X10-2 Ωcm and a maximum transmittance of 93% were achieved for 2 at% indium doped ZnO films. The band gap of ZnO films showed an increase with doping concentration, majorly due to Burstein Moss effect.
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