Enhancement of optical and electrical properties of zno thin films using indium doping

Pristine and indium doped ZnO thin films were prepared on fused silica substrate using chemical spray pyrolysis technique. All films were vacuum annealed at 4000C for three hours at a vacuum of 10-5mbar. The XRD analysis revealed a shift of preferred orientation from (002) to (101) direction at higher indium doping concentration. A minimum sheet resistance of 1.986 X10-2 Ωcm and a maximum transmittance of 93% were achieved for 2 at% indium doped ZnO films. The band gap of ZnO films showed an increase with doping concentration, majorly due to Burstein Moss effect.